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NDF10N62Z
N-Channel Power MOSFET
620 V, 0.75 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating Symbol NDF10N62Z Unit
V DSS
620 V
http://onsemi.com
R DS(ON) (MAX) @ 5 A
0.75 W
N ? Channel
D (2)
Drain ? to ? Source Voltage
Continuous Drain Current, R q JC (Note 2)
V DSS
I D
620
10
V
A
Continuous Drain Current R q JC ,
T A = 100 ° C (Note 2)
Pulsed Drain Current,
V GS @ 10 V
I D
I DM
5.7
36
A
A
G (1)
Power Dissipation, R q JC (Note 1)
Gate ? to ? Source Voltage
Single Pulse Avalanche Energy, I D = 10 A
ESD (HBM)
(JESD22 ? A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T A = 25 ° C) (Figure 14)
P D
V GS
E AS
V esd
V ISO
36
± 30
300
3900
4500
W
V
mJ
V
V
TO ? 220FP
CASE 221D
STYLE 1
MARKING
DIAGRAM
S (3)
Peak Diode Recovery
Continuous Source Current (Body Diode)
dv/dt
I S
4.5 (Note 3)
10
V/ns
A
NDF10N62ZG
AYWW
Maximum Temperature for
Soldering Leads
Operating Junction and
Storage Temperature Range
T L
T J , T stg
260
? 55 to 150
° C
° C
Gate
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 ″ sq. pad size,
(Cu area = 1.127 in sq [2 oz] including traces)
2. Limited by maximum junction temperature
3. I S ≤ 10 A, di/dt ≤ 200 A/ m s, V DD = 80% BV DSS
A
Y
WW
G
Drain
= Location Code
= Year
= Work Week
= Pb ? Free, Halogen ? Free Package
ORDERING INFORMATION
Device
NDF10N62ZG
Package
TO ? 220FP
(Pb ? Free,
Halogen ? Free)
Shipping
50 Units/Rail
? Semiconductor Components Industries, LLC, 2011
September, 2011 ? Rev. 1
1
Publication Order Number:
NDF10N62Z/D
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